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Use of empirically deduced composition and temperature dependent intrinsic carrier density in Si1−xGex, In1−xGaxAs and In1−xGaxAsyP1−y in calculating minimum capacitance in C-V plot of MIS structure

✍ Scribed by Sajal K. Paul; P.K. Basu


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
356 KB
Volume
36
Category
Article
ISSN
0038-1101

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