✦ LIBER ✦
Use of anisotropic laser etching to the top n-GaN layer to alleviate current-crowding effect in vertical-structured GaN-based light-emitting diodes
✍ Scribed by Chen, Tron-Min; Wang, Shui-Jinn; Uang, Kai-Ming; Chen, Shiue-Lung; Tsai, Wei-Chih; Lee, Wei-Chi; Tsai, Ching-Chung
- Book ID
- 120216076
- Publisher
- American Institute of Physics
- Year
- 2007
- Tongue
- English
- Weight
- 537 KB
- Volume
- 90
- Category
- Article
- ISSN
- 0003-6951
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