Upper critical field measurements in MgB2 sputtered films up to 30 T

✍ Scribed by Satoru Noguchi; Shigehito Miki; Hisashi Shimakage; Zhen Wang; Kazuo Satoh; Tsutomu Yotsuya; Takekazu Ishida

• Book ID: 104082394
• Publisher: Elsevier Science
• Year: 2005
• Tongue: English
• Weight: 127 KB
• Volume: 426-431
• Category: Article
• ISSN: 0921-4534
• DOI: 10.1016/j.physc.2005.02.112

✦ Synopsis

We report on the upper critical field (H c2 ) of as-grown MgB 2 thin films deposited on c-plane sapphire substrates using a carrousel-type multiple-targets sputtering system. The H c2 was estimated from the magnetoresistance measurements by using dc 4-terminal method under pulsed magnetic fields up to 30 T. The H c2 (T) for Hkab-plane and Hkc-axis were measured to obtain the anisotropic superconducting properties. Large enhancement in magnitude and small anisotropy were observed in the H c2 (T) curves of the thin film samples as compared to those reported for bulk single crystals.