✦ LIBER ✦
Uniformity improvement of linear power pHEMTs using a very high selective wet etching
✍ Scribed by X. Hue; B. Boudart; B. Bonte; Y. Crosnier
- Publisher
- John Wiley and Sons
- Year
- 1999
- Tongue
- English
- Weight
- 138 KB
- Volume
- 23
- Category
- Article
- ISSN
- 0895-2477
No coin nor oath required. For personal study only.
✦ Synopsis
The realization and characterization of Al Ga Asr 0 .22 0 .78 In Ga AsrGaAs multifinger linear power pHEMTs, using a citric 0 .22 0 .78 acid selecti¨e wet etching for the gate recessing, are reported. A ¨ery high uniformity for both the drain current and pinch-off ¨oltage ¨alues ha¨e been obtained. The linearity is confirmed by a quasiflat profile of the ( ) transconductance and of the maximum a¨ailable gain MAG o¨er a wide gate source ¨oltage. Power and intermodulation distortion measurements at 16 GHz ha¨e been performed. An IP3 ¨alue of 25 dBm has been obtained for a 2 = 75 m de¨ice.