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Uniform and Nonuniform Nucleation of Pores during the Anodization of Si, Ge, and III-V Semiconductors

✍ Scribed by Langa, S.; Carstensen, J.; Christophersen, M.; Steen, K.; Frey, S.; Tiginyanu, I. M.; Föll, H.


Book ID
125439490
Publisher
The Electrochemical Society
Year
2005
Tongue
English
Weight
580 KB
Volume
152
Category
Article
ISSN
0013-4651

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## Abstract Deep straight macropores in n‐type Si have been completely filled with copper (Cu). Homogeneous metal deposition inside the deep pores was achieved by means of electroplating using a solution containing only CuSO~4~ mixed with H~2~SO~4~ and an optimized process that begins at the bottom