✦ LIBER ✦

Uniaxial Strain Effects on Electron Ballistic Transport in Gate-All-Around Silicon Nanowire MOSFETs

✍ Scribed by Lining Zhang; Haijun Lou; Jin He; Mansun Chan

Book ID: 114620696
Publisher: IEEE
Year: 2011
Tongue: English
Weight: 895 KB
Volume: 58
Category: Article
ISSN: 0018-9383
DOI: 10.1109/ted.2011.2165215

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Silicon nanowires with lateral uniaxial

Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs

✍ M. Najmzadeh; L. De Michielis; D. Bouvet; P. Dobrosz; S. Olsen; A.M. Ionescu 📂 Article 📅 2010 🏛 Elsevier Science 🌐 English ⚖ 486 KB

In this work we present for the first time correlation of lateral uniaxial tensile strain and I-V characteristics of GAA Si NW n-MOSFET, all measured on the same device. Micro-Raman spectroscopy is employed for direct strain measurement on devices to exploit the main sources of process-induced strai

Influence of Orientation, Geometry, and

Influence of Orientation, Geometry, and Strain on Electron Distribution in Silicon Gate-All-Around (GAA) MOSFETs

✍ Tienda-Luna, I.M.; Ruiz, F.J.G.; Godoy, A.; Biel, B.; Gamiz, F. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 909 KB

Performance Breakthrough in Gate-All-Aro

Performance Breakthrough in Gate-All-Around Nanowire n- and p-Type MOSFETs Fabricated on Bulk Silicon Substrate

✍ Yi Song; Qiuxia Xu; Jun Luo; Huajie Zhou; Jiebin Niu; Qingqing Liang; Chao Zhao 📂 Article 📅 2012 🏛 IEEE 🌐 English ⚖ 820 KB

Quantum-Transport Study on the Impact of

Quantum-Transport Study on the Impact of Channel Length and Cross Sections on Variability Induced by Random Discrete Dopants in Narrow Gate-All-Around Silicon Nanowire Transistors

✍ Martinez, A.; Aldegunde, M.; Seoane, N.; Brown, A.R.; Barker, J.R.; Asenov, A. 📂 Article 📅 2011 🏛 IEEE 🌐 English ⚖ 1001 KB