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Unexpected features of branched flow through high-mobility two-dimensional electron gases

✍ Scribed by Jura, M. P.; Topinka, M. A.; Urban, L.; Yazdani, A.; Shtrikman, H.; Pfeiffer, L. N.; West, K. W.; Goldhaber-Gordon, D.

Book ID
109945525
Publisher
Nature Publishing Group
Year
2007
Tongue
English
Weight
732 KB
Volume
3
Category
Article
ISSN
1745-2473

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✍ Hashimoto, Shin ;Akita, Katsushi ;Yamamoto, Yoshiyuki ;Ueno, Masaki ;Nakamura, T 📂 Article 📅 2012 🏛 John Wiley and Sons 🌐 English ⚖ 328 KB

## Abstract We have demonstrated a high sheet carrier concentration in AlGaN‐channel high‐electron‐mobility transistors (HEMTs) with AlN barrier layer. We investigate the epitaxial structure of these HEMTs by X‐ray diffraction and reveal that the partial lattice relaxation occurs in the Al~0.51~GaN