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Undoped SiGe heterostructure field effect transistors

โœ Scribed by Jackson, T.N.; Nelson, S.F.; Chu, J.O.; Meyerson, B.S.


Book ID
114535275
Publisher
IEEE
Year
1993
Tongue
English
Weight
276 KB
Volume
40
Category
Article
ISSN
0018-9383

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Heterostructures of Si 0.80 Ge 0.20 /Si (100) were grown by pulsed laser deposition consisting of alternating 10 nm SiGe and silicon layers for a total of 10 periods. The presence of alloy clustering at SiGe/Si interfaces was investigated by parallel transport in transistor structures. Photoluminesc