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Understanding the Effects of Epitaxy Artifacts on SiGe HBT Performance through Detailed Process/Device Simulation

✍ Scribed by Camillo-Castillo, R.; Johnson, J. B.; Liu, Q. Z.; Cheng, P.; Adkisson, J.; Harame, D. L.


Book ID
121360706
Publisher
The Electrochemical Society
Year
2013
Tongue
English
Weight
262 KB
Volume
50
Category
Article
ISSN
1938-6737

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