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Unconventional Carrier-Mediated Ferromagnetism above Room Temperature in Ion-Implanted (Ga, Mn)P:C

✍ Scribed by Theodoropoulou, N.; Hebard, A. F.; Overberg, M. E.; Abernathy, C. R.; Pearton, S. J.; Chu, S. N. G.; Wilson, R. G.

Book ID
119970903
Publisher
The American Physical Society
Year
2002
Tongue
English
Weight
116 KB
Volume
89
Category
Article
ISSN
0031-9007

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## Abstract Epitaxial ZnO films of ∼450 nm thicknesses were grown by MOCVD on r‐sapphire and doped by implantation of 200 keV Mn ions to a dose of 5 × 10^16^ ions/cm^2^. The structural, chemical, and magnetic properties of the films were investigated with X‐ray diffraction (XRD), Rutherford backsca