𝔖 Bobbio Scriptorium
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Ultraviolet photoemission studies of chemisorption and point defect formation on ZnO nonpolar surfaces

✍ Scribed by W. Göpel; R.S. Bauer; G. Hansson


Book ID
104189077
Publisher
Elsevier Science
Year
1980
Weight
54 KB
Volume
99
Category
Article
ISSN
0167-2584

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## Abstract The influence of boron on Si molecular beam epitaxy was investigated as function of coverage and temperature by reflection high‐energy electron diffraction (RHEED). The development of the boron‐covered Si surface was studied additionally by ultraviolet photo electron spectroscopy (UPS)