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Ultrathin HfON/SiO2 dual tunneling layer for improving the electrical properties of metal–oxide–nitride–oxide–silicon memory

✍ Scribed by L. Liu; J.P. Xu; J.X. Chen; F. Ji; X.D. Huang; P.T. Lai


Book ID
118501987
Publisher
Elsevier Science
Year
2012
Tongue
English
Weight
575 KB
Volume
524
Category
Article
ISSN
0040-6090

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