✦ LIBER ✦
Ultrathin aluminum oxide gate dielectric on N-type 4H-SiC prepared by low thermal budget nitric acid oxidation
✍ Scribed by Szu-Wei Huang; Jenn-Gwo Hwu
- Book ID
- 114617613
- Publisher
- IEEE
- Year
- 2004
- Tongue
- English
- Weight
- 364 KB
- Volume
- 51
- Category
- Article
- ISSN
- 0018-9383
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