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Ultralow resistance, selectively silicided VDMOS FETs for high-frequency power switching applications fabricated using sidewall oxide spacer technology

✍ Scribed by Shenai, K.; Piacente, P.A.; Saia, R.; Korman, C.S.; Tantraporn, W.; Baliga, B.J.


Book ID
114538522
Publisher
IEEE
Year
1988
Tongue
English
Weight
158 KB
Volume
35
Category
Article
ISSN
0018-9383

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