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Ultralow dark current p-type strained-layer InGaAs/InAlAs quantum well infrared photodetector with background limited performance for T≤100 K

✍ Scribed by Wang, Y. H.; Li, Sheng S.; Chu, J.; Ho, Pin


Book ID
121347967
Publisher
American Institute of Physics
Year
1994
Tongue
English
Weight
603 KB
Volume
64
Category
Article
ISSN
0003-6951

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