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Ultrahigh-sensitive AlGaAs-GaAs punchthrough heterojunction phototransistor

✍ Scribed by Han Dejun; Li Guohui; Yan Feng; En-Jun Zhu

Book ID
119786397
Publisher
IEEE
Year
1997
Tongue
English
Weight
70 KB
Volume
9
Category
Article
ISSN
1041-1135

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πŸ“œ SIMILAR VOLUMES

Highly sensitive GaAs/AlGaAs heterojunct
Highly sensitive GaAs/AlGaAs heterojunction bolometer
✍ P.K.D.D.P. Pitigala; P.V.V. Jayaweera; S.G. Matsik; A.G.U. Perera; H.C. Liu πŸ“‚ Article πŸ“… 2011 πŸ› Elsevier Science 🌐 English βš– 316 KB

GaAs/AlGaAs multilayer heterojunction structures with different aluminum (Al) fractions and emitter doping densities were tested to identify optimum parameters for high temperature coefficient of resistance (TCR). Higher Al fractions and lower doping densities showed higher TCR. Additionally, p-dope