The atomic structure and mechanism of growth, thermal desorption and dissolution of ultra-thin silver layers deposited in ultra-high vacuum on low-index faces of copper and nickel crystals were investigated with the use of AES, LEED, directional Auger (DAES) and elastic (DEPES) electron spectroscopies , and isothermal desorption. On ( 111) and ( 001) faces of copper and nickel the growth of (111) oriented silver islands was observed with epitaxial relations different for particular faces, while for (011) faces a parallel epitaxy occured for the first silver layer. Different mechanisms of growth f
Frank -van der Merwe, Stranski -Krastanov, and duolayer were found for particu ar substrates using the analysis of Auger peak kinetics base cl ison of the substrate Auger peak height at the beginning of adsor *ex tion on comparand at the first and second breaks of its kinetics. Annealing of the deposit dissolution of silver in the cop layers leads to er substrate and to its evaporation from the nickel substrate. Binding energy of sr ver 5 atoms in the first and second layers of silver on the (001) nickel face was determined using isothermal desorption kinetics.