Ultra-shallow junction formation by spike annealing in a lamp-based or hot-walled rapid thermal annealing system: effect of ramp-up rate
✍ Scribed by Aditya Agarwal; Anthony T. Fiory; Hans-Joachim L. Gossmann; Conor S. Rafferty; Peter Frisella
- Book ID
- 104420734
- Publisher
- Elsevier Science
- Year
- 1998
- Tongue
- English
- Weight
- 228 KB
- Volume
- 1
- Category
- Article
- ISSN
- 1369-8001
No coin nor oath required. For personal study only.
✦ Synopsis
Ultra-shallow p-type junction formation has been investigated using 10508C spike anneals in lamp-based and hotwalled rapid thermal processing (RTP) systems. A spike anneal may be characterized by a fast ramp-up to temperature with only a fraction of a second soak-time at temperature. The eects of the ramp-up rate during a spike anneal on junction depth and sheet resistance were measured for rates of 40, 70 and 1558C/s in a lamp-based RTP, and for 50 and 858C/s in a hot-walled RTP. B + implants of 0.5, 2 and 5 keV at doses of 2 Â 10 14 and 2 Â 10 15 cm À2 were annealed. A signi®cant reduction in junction depth was observed at the highest ramp-up rate for the shallower 0.5-keV B implants, while only a marginal improvement was observed for 2-and 5-keV implants. It is concluded that high ramp-up rates can achieve the desired ultra-shallow junctions with low sheet resistance but only when used in combination with spike anneals and the lowest energy implants.