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UHV-CVD growth and annealing of thin fully relaxed Ge films on (0 0 1)Si

โœ Scribed by M. Halbwax; M. Rouviere; Y. Zheng; D. Debarre; Lam H. Nguyen; J-L. Cercus; C. Clerc; V. Yam; S. Laval; E. Cassan; D. Bouchier


Book ID
108233870
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
372 KB
Volume
27
Category
Article
ISSN
0925-3467

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Unimodal dome-shaped island population o
โœ V Zela; I Pietzonka; T Sass; C Thelander; S Jeppesen; W Seifert ๐Ÿ“‚ Article ๐Ÿ“… 2002 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 196 KB

This work introduces a new approach to achieve a unimodal dome-shaped island population for the self-assembled Ge=Si (0 0 1) dots grown by ultra-high vacuum chemical vapour deposition at T = 620 โ€ข C. A step-wise growth mode is applied, consisting of two Ge deposition steps with a short growth inter