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Type and charge states of point defects in heavily As- and B-doped silicon

✍ Scribed by Y. Nakabayashi; H.I. Osman; K. Yokota; K. Toyonaga; S. Matsumoto; J. Murota; K. Wada; T. Abe

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Some Transport Coefficients in Heavily D

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Molecular dynamics simulation of defect

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✍ Tyagi, M. S. ;Gupta, A. K. 📂 Article 📅 1994 🏛 John Wiley and Sons 🌐 English ⚖ 280 KB

Majority carrier mobility in ultra heavi

✍ M.B. Živanov; M. Jevtić 📂 Article 📅 1993 🏛 Elsevier Science 🌐 English ⚖ 813 KB