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Two-, Three-, and Four-Atom Exchange Effects in bcc

โœ Scribed by Hetherington, J. H.; Willard, F. D. C.

Book ID
118234094
Publisher
The American Physical Society
Year
1975
Tongue
English
Weight
233 KB
Volume
35
Category
Article
ISSN
0031-9007

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Luminescence centres containing two, thr
Luminescence centres containing two, three and four hydrogen atoms in radiation-damaged silicon
โœ A.N. Safonov; E.C. Lightowlers ๐Ÿ“‚ Article ๐Ÿ“… 1996 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 311 KB

Photoluminescence measurements are reported which show that the centres responsible for the X-lines, which are created by radiation damage in silicon deliberately doped with hydrogen followed by annealing at 450ยฐC, contain two, three or four hydrogen atoms at equivalent or inequivalent sites. The la