Two-Terminal Write-Once-Read-Many-Times Memory Device Based on Charging-Controlled Current Modulation in Al/Al-Rich /p-Si Diode

✍ Scribed by Wei Zhu; Chen, T.P.; Yang Liu; Ming Yang; Fung, S.

• Book ID: 114620373
• Publisher: IEEE
• Year: 2011
• Tongue: English
• Weight: 433 KB
• Volume: 58
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/ted.2011.2105493