Two-dimensional electron gas at a semiconductor-semiconductor interface
✍ Scribed by H.L. Störmer; R. Dingle; A.C. Gossard; W. Wiegmann; M.D. Sturge
- Publisher
- Elsevier Science
- Year
- 1979
- Tongue
- English
- Weight
- 311 KB
- Volume
- 29
- Category
- Article
- ISSN
- 0038-1098
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📜 SIMILAR VOLUMES
A theory is developed of the density of states (DOS) of the two-dimensional electron gas (2D EG) in semiconductor heterostructures, taking into account the effect of disorder caused by some random field existing in the sample. For a smooth random field, the calculation is carried out within its Gaus
Receint ## IS October 1978 tttuminat~~,n ofa p-type semiLwnductor-NH3 intrrfzce (or heterojunction) with phoiom of enegy greater than the wmicondtxtor band up causes electrons to te injected into the Ntt~\_There is no bole injection at a n-type electrode-Sug-\_-lions are made for the required ene