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Two-dimensional doping profile characterization of MOSFETs by inverse modeling using I-V characteristics in the subthreshold region

✍ Scribed by Lee, Z.K.; McIlrath, M.B.; Antoniadis, D.A.


Book ID
114537813
Publisher
IEEE
Year
1999
Tongue
English
Weight
251 KB
Volume
46
Category
Article
ISSN
0018-9383

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