✦ LIBER ✦
Two-dimensional analysis of cutoff frequencies of GaAs MESFETS with various substrate conditions (invited article)
✍ Scribed by Horio, Kazushige
- Publisher
- John Wiley and Sons
- Year
- 1993
- Tongue
- English
- Weight
- 639 KB
- Volume
- 3
- Category
- Article
- ISSN
- 1050-1827
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✦ Synopsis
Abstract
Cutoff frequencies of GaAs MESFETs are simulated by using a model that considers impurity compensation by deep levels in the semi‐insulating (SI) substrate. For a higher acceptor density SI substrate, an achievable cutoff frequency becomes higher because the substrate current becomes smaller. Effects of introducing a p‐buffer layer are also studied in terms of dependencies on p‐layer thickness and its doping density. © 1993 John Wiley & Sons, Inc.