Classified abstracts 3408-3417 edge, particularly in the more ionic semiconductors, one may substitute a more electropositive element like Al for the Au contact. To position the Fermi level closer to a valence-band edge, however, there are no further possibilities among the elemental metals, since A
✦ LIBER ✦
Tunnelling study of Pb1-x Snx Te
✍ Scribed by Takasaki, K. ;Tanaka, S.
- Publisher
- John Wiley and Sons
- Year
- 1977
- Tongue
- English
- Weight
- 519 KB
- Volume
- 40
- Category
- Article
- ISSN
- 0031-8965
No coin nor oath required. For personal study only.
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## Abstract A study is made of the ^125^Te Mössbauer parameters dependence on the composition in Pb~__x__~Sn~1—__x__~Te. It is concluded that, in concomitance with the decrease of the gap value up to zero, there is both, a significant variation of tellurium electronic configuration and a change of