✦ LIBER ✦

Tunneling magnetoresistance in GaMnAs/AlAs/GaMnAs ferromagnetic semiconductor heterostructures

✍ Scribed by M Tanaka; Y Higo

Publisher: Elsevier Science
Year: 2002
Tongue: English
Weight: 457 KB
Volume: 13
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00178-9

No coin nor oath required. For personal study only.

📜 SIMILAR VOLUMES

Large tunneling magnetoresistance (>70%)

Large tunneling magnetoresistance (>70%) in GaMnAs/AlAs/GaMnAs single-barrier ferromagnetic semiconductor tunnel junctions

✍ Y Higo; H Shimizu; M Tanaka 📂 Article 📅 2001 🏛 Elsevier Science 🌐 English ⚖ 121 KB

Layer-thickness dependence in tunneling

Layer-thickness dependence in tunneling magnetoresistance and current-driven magnetization reversal using GaMnAs-based double-barrier structures

✍ Maya Watanabe; Hiroshi Toyao; Jun Okabayashi; Takeshi Yamaguchi; Junji Yoshino 📂 Article 📅 2007 🏛 Elsevier Science 🌐 English ⚖ 330 KB

We have investigated the layer-thickness dependence on tunneling magnetoresistance (TMR) in double-barrier structures using GaMnAs-based magnetic tunneling junctions in order to clarify the origin of low threshold current density for current-driven magnetization orientation reversal. The TMR charact