Tunneling from Deep Levels of l–c Type in Electric Fields
✍ Scribed by H. Köster Jr.; O. V. Kurnosova; I. N. Yassievich
- Publisher
- John Wiley and Sons
- Year
- 1985
- Tongue
- English
- Weight
- 505 KB
- Volume
- 127
- Category
- Article
- ISSN
- 0370-1972
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📜 SIMILAR VOLUMES
## Abstract An analytic expression for the probability of thermal activation of electrons trapped in deep defect states of an insulator is derived taking explicitly into account an electric field and lattice vibrations. From the activation probability a detrapping current intensity is calculated, w
Deep level transient spectroscopy (DLTS) and Laplace-DLTS (L-DLTS) have been used to investigate defects in an n-type GaAs before and after exposure to a dc hydrogen plasma (hydrogenation). DLTS revealed the presence of three prominent electron traps in the material in the temperature range 20-300 K