Tunneling Field Effect Transistor Technology

✍ Scribed by Lining Zhang, Mansun Chan (eds.)

Publisher: Springer International Publishing
Year: 2016
Tongue: English
Leaves: 217
Edition: 1
Category: Library

No coin nor oath required. For personal study only.

✦ Synopsis

This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

✦ Table of Contents

Front Matter....Pages i-ix
Steep Slope Devices and TFETs....Pages 1-31
Tunneling FET Fabrication and Characterization....Pages 33-60
Compact Models of TFETs....Pages 61-87
Challenges and Designs of TFET for Digital Applications....Pages 89-109
Atomistic Simulations of Tunneling FETs....Pages 111-149
Quantum Transport Simulation of III-V TFETs with Reduced-Order ( \varvec{k} \cdot \varvec{p} ) Method....Pages 151-180
Carbon Nanotube TFETs: Structure Optimization with Numerical Simulation....Pages 181-210
Back Matter....Pages 211-213

✦ Subjects

Circuits and Systems; Electronic Circuits and Devices; Electronics and Microelectronics, Instrumentation

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