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Tunnel transfer of electrons, holes and excitons in biased heterostructures

โœ Scribed by C. Delalande; P. Rolland

Publisher
Elsevier Science
Year
1990
Tongue
English
Weight
584 KB
Volume
8
Category
Article
ISSN
0749-6036

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The enhanced electron tunneling effect and the electron -X intervalley interlayer transfer in the AlAs/GaAs (001) triple-barrier heterostructure have been investigated both experimentally and theoretically. The effects of the external bias on the electronic structure, -X state mixing and higher lyin