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Tunnel magnetoresistance and spin torque switching in MgO-based magnetic tunnel junctions with a Co/Ni multilayer electrode

โœ Scribed by Moriyama, Takahiro; Gudmundsen, Theodore J.; Huang, Pinshane Y.; Liu, Luqiao; Muller, David A.; Ralph, Daniel C.; Buhrman, Robert A.


Book ID
120055896
Publisher
American Institute of Physics
Year
2010
Tongue
English
Weight
954 KB
Volume
97
Category
Article
ISSN
0003-6951

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Spintronics is an emerging technology exploiting the spin degree of freedom and has proved to be very promising for new types of fast electronic devices. Amongst the anticipated advantages of spintronics technologies, researchers have identified the non-volatile storage of data with high density and