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Tunnel current in n-poly-Si/SiO2/n-Si structures with the 40–75 Å thermally grown silicon oxide films under very strong fields

✍ Scribed by O.G. Balev; S.G. Bantser; A.I. Klimovskaja; Y.A. Okhrimenko; E.M. Kostenko; A.A. Malashkevich; V.E. Jasnikov


Publisher
Elsevier Science
Year
1993
Tongue
English
Weight
379 KB
Volume
65-66
Category
Article
ISSN
0169-4332

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