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Tuning of surface boundary conditions for the 3D simulation of gated heterostructures

✍ Scribed by G. Iannaccone; M. Macucci; E. Amirante; Y. Jin; H. Lanois; C. Vieu

Publisher: Elsevier Science
Year: 2000
Tongue: English
Weight: 190 KB
Volume: 27
Category: Article
ISSN: 0749-6036
DOI: 10.1006/spmi.2000.0843

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✦ Synopsis

We propose a method for treating the boundary conditions at the exposed surface of semiconductor nanostructures, and compare the results from simulations based on such a method with experimental measurements on test devices defined electrostatically by metal gates on AlGaAs/GaAs heterostructures. In particular, we show that the pinch-off voltage of quantum point contacts realized with split gates can be reasonably reproduced, provided the lithographic gap is small enough.

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