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TSUPREM-4 based modeling of boron and carbon diffusion in SiGeC base layers under rapid thermal annealing conditions

✍ Scribed by Arturo Sibaja-Hernandez; Ming Wei Xu; Stefaan Decoutere; Herman Maes


Book ID
103846335
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
314 KB
Volume
8
Category
Article
ISSN
1369-8001

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