𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Trisneopentylgallium as a precursor for atomic layer epitaxy of GaAs

✍ Scribed by P. Yeo; R. Arès; S. P. Watkins; G. A. Horley; P. O’Brien; A. C. Jones


Book ID
107457440
Publisher
Springer US
Year
1997
Tongue
English
Weight
102 KB
Volume
26
Category
Article
ISSN
0361-5235

No coin nor oath required. For personal study only.


📜 SIMILAR VOLUMES


Atomic layer epitaxy of GaMnAs on GaAs(0
✍ Ozeki, M. ;Haraguchi, T. ;Fujita, A. 📂 Article 📅 2007 🏛 John Wiley and Sons 🌐 English ⚖ 229 KB

## Abstract A self‐limiting mechanism in atomic layer epitaxy (ALE) has been investigated for the heterogrowth of GaMnAs on GaAs(001) substrate. In the ALE, trimethylgallium, bismethylcyclopentadienylmanganese and trisdimethylaminoarsine were used as source materials of gallium, manganese and arsen