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Triple-axis X-ray diffraction study of polishing damage in III-V semiconductors

✍ Scribed by C. D. Moore; I. Pape; B. K. Tanner


Book ID
105702768
Publisher
Italian Physical Society
Year
1997
Tongue
English
Weight
449 KB
Volume
19
Category
Article
ISSN
0392-6737

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## Abstract GaAs crystals and Al~0.43~Ga~0.57~As epitaxial layers of low dislocation density were implanted with 146 keV, 100 keV and 60 keV H^+^ ions and studied by recording of rocking curves, reciprocal space mapping and Bragg‐type section topography. The X‐ray investigation were performed also