X-ray synchrotron diffraction studies of
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Wieteska, K. ;Wierzchowski, W. ;Graeff, W. ;Gawlik, G.
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Article
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2006
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John Wiley and Sons
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English
β 405 KB
## Abstract GaAs crystals and Al~0.43~Ga~0.57~As epitaxial layers of low dislocation density were implanted with 146 keV, 100 keV and 60 keV H^+^ ions and studied by recording of rocking curves, reciprocal space mapping and Braggβtype section topography. The Xβray investigation were performed also