Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction

Combined effects of substrate compliance

Combined effects of substrate compliance and film compositional grading on strain relaxation in layer-by-layer semiconductor heteroepitaxy: the case of InAs/In0.50Ga0.50As/GaAs(1 1 1)A

✍ Luis A Zepeda-Ruiz; W Henry Weinberg; Dimitrios Maroudas 📂 Article 📅 2003 🏛 Elsevier Science 🌐 English ⚖ 532 KB

A systematic theoretical analysis is presented of the combined effects of substrate compliance and film compositional grading on the relaxation of strain due to lattice mismatch in layer-by-layer semiconductor heteroepitaxy. The analysis is based on a combination of continuum elasticity theory and a

Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0&#xa0;0&#xa0;1) substrate measured by a series of symmetric double crystal X-ray diffraction

Triclinic deformation and anisotropic strain relaxation of an InAs film on a GaAs(0 0 1) substrate measured by a series of symmetric double crystal X-ray diffraction