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Trapping center parameters in TlInSSe layered single crystals by thermally stimulated currents measurements

✍ Scribed by I. Guler; N.M. Gasanly

Book ID
116605279
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
533 KB
Volume
485
Category
Article
ISSN
0925-8388

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πŸ“œ SIMILAR VOLUMES

Shallow trapping center parameters in as
Shallow trapping center parameters in as-grown AgIn5S8 crystals determined by thermally stimulated current measurements
✍ T. Yildirim; N. M. Gasanly πŸ“‚ Article πŸ“… 2009 πŸ› John Wiley and Sons 🌐 English βš– 233 KB

## Abstract Thermally stimulated current measurements were carried out on as‐grown AgIn~5~S~8~ single crystals. The investigations were performed in temperatures ranging from 10 to 70 K with heating rate of 0.2 Ks^–1^. The analysis of the data revealed the electron trap level located at 5 meV. The