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Trap and Inversion Layer Mobility Characterization Using Hall Effect in Silicon Carbide-Based MOSFETs With Gate Oxides Grown by Sodium Enhanced Oxidation
✍ Scribed by Tilak, V.; Matocha, K.; Dunne, G.; Allerstam, F.; Sveinbjornsson, E.O.
- Book ID
- 114619303
- Publisher
- IEEE
- Year
- 2009
- Tongue
- English
- Weight
- 244 KB
- Volume
- 56
- Category
- Article
- ISSN
- 0018-9383
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