Transverse Magnetoresistance of n-Type Ge in Quantizing Magnetic Fields

✍ Scribed by V. M. Babich; P. I. Baranskii; S. L. Korolyuk; A. G. Samoilovich; T. N. Chelova

• Publisher: John Wiley and Sons
• Year: 1973
• Tongue: English
• Weight: 476 KB
• Volume: 55
• Category: Article
• ISSN: 0370-1972
• DOI: 10.1002/pssb.2220550148

✦ Synopsis

Abstract

The anisotropy and the magnetic field dependences of ϱ⟂H/ϱ~0~ were investigated on n‐Ge (n~e~ ≈ 1.59 × 1013 × m^−3^ cm^−3^) in the range of dominant phonon scattering (at 77 °K) in quantizing magnetic fields (up to 250 kOe). The developed theory is in quantitative accordance with the experimental data. It is shown that: the difference of magnetic field dependences ϱ⟂/H/ϱ~0~ = f(H) for H ‖ [001] or [011] (both at j ‖ [100] and at j ‖ [110]) is caused by the effect of intervalley redistribution of current carriers in quantizing H; the crystal imperfections (type of Herring statistically distributed inhomogenities) do not reveal itself noticeably at the quantization.