Transport studies of MBE-grown InAs/GaSb superlattices

✍ Scribed by F. Szmulowicz; H.J. Haugan; S. Elhamri; G.J. Brown; W.C. Mitchel

• Book ID: 111492783
• Publisher: SP Versita
• Year: 2010
• Tongue: English
• Weight: 241 KB
• Volume: 18
• Category: Article
• ISSN: 1230-3402
• DOI: 10.2478/s11772-010-1027-6

✦ Synopsis

We report on the results of transport studies of MBE-grown InAs/GaSb superlattices. We demonstrate that the in-plane mobility is limited by interface roughness scattering by showing that, as a function of InAs layer width L, the in-plane mobility behaves as m µ L 5 3

. , which closely follows the classic sixth power dependence expected from theory for interface-roughness-limited mobility. Fits to the mobility data indicate that, for one monolayer surface roughness, the roughness correlation length is about 35 . Next, we show that the in-plane carrier mobility in InAs/GaSb superlattices is inversely proportional to carrier density in n-and p-type samples, the result of screened interface roughness scattering.