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Transport relaxation time and quantum lifetime in selectively doped GaAs/AlAs heterostructures

✍ Scribed by D. V. Dmitriev, I. S. Strygin, A. A. Bykov, S. Dietrich, S. A. Vitkalov


Book ID
114989386
Publisher
SP MAIK Nauka/Interperiodica
Year
2012
Tongue
English
Weight
224 KB
Volume
95
Category
Article
ISSN
0021-3640

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By selective doping (Be) of the well and barrier regions of GaAs/Al 0.3 Ga 0.7 As structures we have realized the situation where the upper Hubbard band (A ΓΎ centers) has been occupied by holes in the equilibrium. We studied the temperature behavior of the Hall effect, variable range hopping (VRH) c