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Transport property of α-(BEDT-TTF)2I3 under high pressure–ultra narrow gap semiconductor

✍ Scribed by Naoya Tajima; Akiko Ebina; Masafumi Tamura; Yutaka Nishio; Koji Kajita


Book ID
117538448
Publisher
Elsevier Science
Year
2001
Tongue
English
Weight
339 KB
Volume
120
Category
Article
ISSN
0379-6779

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The temperature and magnetic field dependence of the electrical conductivity of a-(BEDT-TTF)2I 3 under high pressure was investigated between 20 K and 2 K. The results were analyzed using the Boltzmarm equation method. It is shown that the mobility of carriers increases with decreasing temperature,