Transport properties of localized states in Bi2Sr2CuO6 single crystals
β Scribed by Katsuhiko Inagaki; Kazuhiko Yamaya; Satoshi Tanda
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 221 KB
- Volume
- 263
- Category
- Article
- ISSN
- 0921-4534
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β¦ Synopsis
Transport properties, such as electric conductivity, magnetoresistance, and Hall coefficient are measured in Bi 2Sr2CuO6 single crystals. The conductivity drops at low temperature proportional to log T. This behavior is interpreted as the weakly localized regime of Anderson localization, since we observe log T, log E and log H dependences of the conductivity. The coefficients of log T and log E come close to the expected values by treating the sample as consisting of stacked two-dimensional conduction planes. However, the coefficient of log H is much less than the universal value which is expected from theories of the weakly localized regime. From the results of Hall measurement, we show that electron-electron interaction does not play a major role.
π SIMILAR VOLUMES
The upper critical magnetic fields of Bi2Sr2CuOe single crystals with the applied magnetic fields H parallel to the ab-plane, Hc2(ab), and perpendicular to the ab-plane, Ha(c), have been determined from the AC electrical resistivity measurements up to 8 T. Both He2 (ab) and Hc2 ( c ) exhibit positiv
Crystals of the material with the nominal composition Bi2Sr2CuO6 exist as an oxygen deficient solid solution in which strontium atoms are replaced by bismuth. Results are presented from a series of measurements of the Hall coefficient as a function of temperature on crystals from across the range of