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Transport properties of Fibonacci heterostructures: a nonparabolic approach

โœ Scribed by M. Palomino-Ovando; G.H. Cocoletzi

Publisher
Elsevier Science
Year
1998
Tongue
English
Weight
151 KB
Volume
24
Category
Article
ISSN
0749-6036

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โœฆ Synopsis

A fourth order hamiltonian is used to explore transport properties of semiconductor Fibonacci heterostructures. The tunneling current and time delay are obtained for different Fibonacci sequences constructed with Ga As and Al x Ga 1-x As. Energy minibands are calculated to study the fractal dimension and critical electronic states in quasi-periodic arrays. Results show that nonparabolic corrections produce changes in the tunneling current, time delay and fractal dimension, and a low voltage shift of the current peaks compared with the parabolic theory. The electronic states preserve their critical nature in the presence of nonparabolic effects.

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