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Transport Properties of CdTe X/$\gamma$-Ray Detectors With $p$-$n$ Junction

✍ Scribed by Aoki, T.; Gnatyuk, V. A.; Kosyachenko, L. A.; Maslyanchuk, O. L.; Grushko, E. V.

Book ID
124059703
Publisher
IEEE
Year
2011
Tongue
English
Weight
324 KB
Volume
58
Category
Article
ISSN
0018-9499

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## Abstract We report on the atmospheric pressure metalorganic vapour phase epitaxy of both nominally undoped and iodine (I) donor doped CdTe layers on high resistivity (111)B CdTe substrates, as a preliminary step towards the fabrication of p‐i‐n diode X‐ray detectors. CdTe epilayers were grown at