## Abstract We report on fabrication and low temperature transport properties of doubleβgate SiO~2~βSiβSiO~2~ quantum well with a 16.5 nm thick Si layer. The device is fabricated on a siliconβonβinsulator substrate utilizing wafer bonding, which enables us to use heavily doped back gate. Transport
β¦ LIBER β¦
Transport properties of a gated, double quantum well HEMT
β Scribed by Harris, J J; Velde, B J van der; Roberts, C; Woodbridge, K; Hutchings, K M
- Book ID
- 120992101
- Publisher
- Institute of Physics
- Year
- 1991
- Tongue
- English
- Weight
- 217 KB
- Volume
- 6
- Category
- Article
- ISSN
- 0268-1242
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