Single-phase structure of CuFe 2 O 4 and Cu 1Àx Zn x Ga 0.3 Fe 1.7 O 4 ; with (0.0rxr0.5) are synthesized. Electrical conductivity measurements as a function of temperature are carried out in the frequency range (10 2 -10 5 Hz) for the prepared samples. The obtained results of these materials reveal a metalliclike behavior in the low range of frequency. At high frequency regime metallic-to-semiconductor transition has been observed as the compositional parameter x increases. Metallic-like behavior is accompanied with samples having low Zn content, where cation-cation [Cu-Cu] interaction is major at the octahedral B-sites and semiconductor behavior is associated with compounds having high Zn content, where cation-anion-cation [Fe-O-Fe] interaction is most predominant at B-sites in these spinel oxides. All studied compositions exhibit a transition with change in the slope of conductivity versus temperature curve. This transition temperature is found to decrease linearly with increasing Zn concentration x. The relation of the universal exponent s with temperature indicates the presence of two hopping conduction mechanisms; the correlated barrier hopping CBH at low Zn content xr0.2 and small polaron (SP) at Zn content xZ0.3.