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Transport properties and barrier height evaluation in Ni/InAlN/GaN Schottky diodes

✍ Scribed by Donoval, D.; Chvála, A.; Šramatý, R.; Kováč, J.; Morvan, E.; Dua, Ch.; DiForte-Poisson, M. A.; Kordoš, P.

No coin nor oath required. For personal study only.

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