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Transport phenomena inside the pores involved in the kinetics and mechanism of growth of porous anodic Al2O3 films on aluminium

โœ Scribed by G. Patermarakis


Publisher
Elsevier
Year
1996
Tongue
English
Weight
758 KB
Volume
404
Category
Article
ISSN
1572-6657

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๐Ÿ“œ SIMILAR VOLUMES


The mechanism of growth of porous anodic
โœ G. Patermarakis; H.S. Karayannis ๐Ÿ“‚ Article ๐Ÿ“… 1995 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 928 KB

The mechanism of growth of porous anodic AI,O, films at various bath temperatures, current densities and H,SO, concentrations was studled for tiims produced in a vigorously stirred bath at anodization times higher than those at which the maximum pore diameter behind or at film surface approaches fir

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A kinetic study on the growth of porous anodic Al,O, films on Al metal, anodized galvanostatically at current densities 5-75mAcm-' in a stirred 15% w/v H,SO, bath solution at bath temperatures 204OYZ, was performed. A strict kinetic model was formulated which was, nevertheless, rather complex. There

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A strict kinetic model, governing the growth of porous anodic 01 2 0 3 films, was developed in a form easily and directly applicable to a galvanostatic anodization in a stirred bath at constant temperature . It was applied to the experimental results obtained from film growth at 25 ยฐC, 1SmAcm -2 and

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## Ahstrati-Porous anodic Al,4 flhns were investigated for their behaviour during hydrothermal treatment in H,O at 100ยฐC and a mechanism for the process of oxide hydration was proposed. The films were prepared galvanostatically in a 15% w/v HsSO, bath at 20, 25 and 30ยฐC and at 5, 15 and 35 mA cm-'